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1 single-poly gate
затвор з монокристалічного і полікристалічного кремніюEnglish-Ukrainian dictionary of microelectronics > single-poly gate
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2 single-poly gate MOS
МОН-структура із затворами з монокристалічного і полікристалічного кремніюEnglish-Ukrainian dictionary of microelectronics > single-poly gate MOS
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3 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
4 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
5 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
6 structure
1. ім. структура; конструкція 2. дієсл. формувати структуру - array structure
- band structure
- basic structure
- bilevel structure
- bipolar structure
- bridge structure
- charge-coupled device structure
- charge-coupled structure
- charge-transfer device structure
- charge-transfer structure
- chip structure
- CMOS structure
- contiguous-disk propagating structure
- data structure
- delta-type doping structure
- disordered structure
- double-barrier parabolic well structure
- double-implanted structure
- functional structure
- gate structure
- graded structure
- heterogeneous structure
- heterojunction structure
- homogeneous structure
- implanted structure
- insulated substrate structure
- integrated circuit structure
- integrated structure
- interconnection structure
- interdigital collector structure
- interface structure
- isolation-moat structure
- Josephson-effect structure
- junction-isolated structure
- latchup resistant structure
- lateral structure
- lateral transistor structure
- lattice structure
- lattice-strained structure
- lead structure
- logic structure
- MAS structure
- mask structure
- merged structure
- mesa -type structure
- mesa structure
- MIM structure
- MIS structure
- MNOS structure
- monolithic-typestructure
- monolithicstructure
- MOS structure
- MSM structure
- MTOS structure
- multigate structure
- multilayer structure
- multilevel structure
- nonhomogeneous-base structure
- n-p-n structure
- nonresonant surface реriodical structure
- oxide-isolated structure
- pin structure
- planar structure
- planar superlattice structure
- p-n-p structure
- polycrystalline resistor structure
- propagating structure
- quantum-box structure
- quantum well structure
- quasi-one dimensional structure
- recessed structure
- regular crystal structure
- self-aligned gate structure
- self-registered gate structure
- semiconductor structure
- semi-ROX structure
- series-gated structure
- shallow chip structure
- shield structure
- short-channel device structure
- short-channel structure
- SIC structure
- silicide-on-polysilicon structure
- silicon-in-sapphire structure
- silicon-on- insulator structure
- silicon- insulator structure
- silicon-on-sapphire structure
- silicon-on-spinel structure
- silicon-over oxide-semiconductor structure
- single-crystal structure
- slow-wave structure
- sphalerite-type structure
- submicrometer structure
- superlattice structure
- surface periodical structure
- test structure
- tiered structure
- totally ordered structure
- trench structure
- trench-gate structure
- trench isolation structure
- triple-diffusion structure
- triple-poly structure
- twin-well structure
- ultra-small structure
- unipolar structure
- van der Pauw structure
- vertical injector structure
- vertically integrated structure
- V-groove structure
- wafer асceptance test structure
- wiring layer structure
- zinc blende structureEnglish-Ukrainian dictionary of microelectronics > structure
См. также в других словарях:
single-poly gate — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
single-crystal and polysilicon gate — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
kombiniertes Gate aus ein- und polykristallinem Silizium — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
Poly — For the prefix and words related to it see Wiktionary. Poly can have multiple meanings::* As a prefix, often meaning more than one or many (eg, polyvalent capable of many valences):* As a feminine given name (Poly, also spelled Polly).Poly is… … Wikipedia
High-k+Metal-Gate-Technik — Schematischer Querschnitt durch den Gate Aufbau eines Transistors in High k+Metal Gate Technik Die High k+Metal Gate Technik (HKMG Technik) bezeichnet in der Halbleitertechnik einen speziellen Aufbau von Metall Isolator Halbleiter… … Deutsch Wikipedia
Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because … Wikipedia
Korg mono/poly — A Korg Mono/Poly is a mono polyphonic analog synthesizer manufactured by Korg from 1981–1984. The original retail price was $1400. This keyboard is the sister synth to the Korg Polysix and this model as well as the Polysix are being swiped up for … Wikipedia
Floating Gate MOSFET — The Floating Gate MOSFET (FGMOS) is a field effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are… … Wikipedia
grille en monosilicium et polysilicium — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
monokristalinio ir polikristalinio silicio užtūra — statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из монокристаллического и поликристаллического кремния, m… … Radioelektronikos terminų žodynas
затвор из монокристаллического и поликристаллического кремния — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
